Semiconductor device including a metal gate electrode formed...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S213000, C257S288000, C257S327000, C257S329000, C257SE29130, C257SE21428, C438S584000, C438S585000, C438S589000

Reexamination Certificate

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11138034

ABSTRACT:
A semiconductor device including a transistor and a method of forming thereof are provided. The semiconductor device comprises a metal gate electrode. A lower portion of the metal gate electrode fills a channel trench formed at a predetermined region of a substrate, and an upper portion of the metal gate electrode protrudes on the substrate. A gate insulating layer is interposed between inner sidewalls and a bottom surface of the channel trench, and the metal gate electrode. Source/drain regions are formed at the substrate in both sides of the metal gate electrode.

REFERENCES:
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6093947 (2000-07-01), Hanafi et al.
patent: 6214670 (2001-04-01), Shih et al.
patent: 6660591 (2003-12-01), Peake et al.
patent: 2004-039985 (2004-02-01), None

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