Semiconductor device including a dielectric layer having a...

Details Semiconductor device including a dielectric layer having a... Semiconductor device including a dielectric layer having a...

2006-05-16

2006-05-16

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257S913000

Reexamination Certificate

active

07045418

ABSTRACT:
The present invention provides a semiconductor device (200), a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the semiconductor device (200) includes a floating gate (230) located over a semiconductor substrate (210), wherein the floating gate (230) has a metal control gate (250) located thereover. The semiconductor device (200), in the same embodiment, further includes a dielectric layer (240) located between the floating gate230and the metal control gate (250), the dielectric layer (240) having a gettering material located therein.

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