Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-06-25
2011-10-18
Mandala, Victor A (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C438S156000, C257SE21429
Reexamination Certificate
active
08039347
ABSTRACT:
A semiconductor device having vertically aligned transistors made from pillar structures that have flat side surfaces is presented. The semiconductor device includes a semiconductor substrate, spacers, and gates. The semiconductor substrate has pillar structures that have flat side surfaces. The spacers are on sidewalls only on the upper portions of the pillar structures. The gates surround lower portions of the pillar structures.
REFERENCES:
patent: 7935598 (2011-05-01), Lee
patent: 2006/0097304 (2006-05-01), Yoon et al.
patent: 1020030019639 (2003-03-01), None
patent: 1020070091833 (2007-09-01), None
Kim Sung Jun
Lee Young Ju
Park Hyung Soon
Park Jum Yong
Shin Jong Han
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Mandala Victor A
Stowe Scott
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