Semiconductor device having vertical channels and method of...

Details Semiconductor device having vertical channels and method of... Semiconductor device having vertical channels and method of...

2006-07-14

2009-10-06

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S396000, C257S397000, C257SE29020

Reexamination Certificate

active

07598571

ABSTRACT:
A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

REFERENCES:
patent: 6396108 (2002-05-01), Krivokapic et al.
patent: 6583469 (2003-06-01), Fried et al.
patent: 6972226 (2005-12-01), Deppe et al.
patent: 7335564 (2008-02-01), Kwon
patent: 2005/0029583 (2005-02-01), Popp et al.
patent: 2005/0035391 (2005-02-01), Lee et al.
patent: 2007/0246779 (2007-10-01), Chun et al.
patent: 2004-0074501 (2004-08-01), None
English language abstract of Korean Publication No. 2004-0074501.

Affiliated with

Also associated with

Rating

Semiconductor device having vertical channels and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having vertical channels and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having vertical channels and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4091705