Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2009-12-10
2011-10-18
Nguyen, Dang (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S211000, C365S222000
Reexamination Certificate
active
08040742
ABSTRACT:
A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.
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Agersonn Rall Group, L.L.C.
Nguyen Dang
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