Semiconductor device having trench-type gate and its...

Details Semiconductor device having trench-type gate and its... Semiconductor device having trench-type gate and its...

2009-05-14

2010-10-05

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S272000, C257SE21410

Reexamination Certificate

active

07807531

ABSTRACT:
In a semiconductor device, a gate silicon dioxide layer is formed within a trench of a semiconductor wafer. A first gate electrode is formed on a sidewall of the trench of the semiconductor wafer via the gate silicon dioxide layer. An insulating layer is formed on a bottom of the trench of the semiconductor wafer via the gate silicon dioxide layer and surrounded by the first gate electrode. The insulating layer excludes silicon dioxide and has different etching characteristics from those of silicon dioxide. A second gate electrode is buried in the trench of the semiconductor wafer, and is in contact with the first gate electrode and the insulating layer.

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