Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2008-04-01
2008-04-01
Deo, Duy-Vu N. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
C438S690000, C438S424000, C438S454000, C438S710000, C438S720000, C438S978000, C257S397000, C257S510000, C257S522000, C257S216000, C257S080000, C257S097000
Reexamination Certificate
active
10734354
ABSTRACT:
A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a buried layer, wherein the buried layer includes a first buried layer for filling a lower part of the trench isolation layer and a second buried layer for filling an upper part of the trench isolation layer. A semiconductor device preferably further includes a silicon oxide layer disposed between the semiconductor substrate and the silicon nitride liner. The silicon oxide layer includes a thermal oxide layer densified at a temperature over about 800° C.
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Heo Jin-Hwa
Hong Soo-Jin
Angadi Maki
Deo Duy-Vu N.
F.Chau & Associates LLC
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