Semiconductor device having trench capacitor and fabrication...

Details Semiconductor device having trench capacitor and fabrication... Semiconductor device having trench capacitor and fabrication...

2007-10-02

2007-10-02

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S399000, C257S618000, C257S906000

Reexamination Certificate

active

10922228

ABSTRACT:
A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.

REFERENCES:
patent: 6121651 (2000-09-01), Furukawa et al.
patent: 6140175 (2000-10-01), Kleinhenz et al.
patent: 6552382 (2003-04-01), Wu
patent: 6867450 (2005-03-01), Kito et al.
patent: 2004/0150037 (2004-08-01), Katsumata et al.
patent: 2000-294744 (2000-10-01), None
patent: 2004-214379 (2004-07-01), None

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