Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2007-02-20
2009-08-25
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C257S780000
Reexamination Certificate
active
07579212
ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.
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Kayukawa Kimiharu
Miura Shoji
Noritake Chikage
Tanahashi Akira
Coleman W. David
DENSO CORPORATION
Posz Law Group , PLC
Shook Daniel
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