Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-11-18
2009-06-09
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S506000, C257S510000, C257S635000
Reexamination Certificate
active
07544607
ABSTRACT:
A semiconductor device having a thin film formed by atomic layer deposition and a method for fabricating the same, wherein the semiconductor device includes a liner layer formed on an internal wall and bottom of a trench, gate spacers formed on the sidewalls of gate stack patterns functioning as a gate line, a first bubble prevention layer formed on the gate spacers and the gate stack patterns, bit line spacers formed on the sidewalls of bit line stack patterns functioning as a bit line, and a second bubble prevention layer formed on the bit line spacers and the gate stack patterns and at least one of the above is formed of a multi-layer of a silicon nitride layer and a silicon oxide layer, or a multi-layer of a silicon oxide layer and a silicon nitride layer, thereby filling the trench, gate stack patterns, or bit line stack patterns without a void.
REFERENCES:
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 6118167 (2000-09-01), DiSimone et al.
patent: 6177307 (2001-01-01), Tu et al.
patent: 6326282 (2001-12-01), Park et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6461937 (2002-10-01), Kim et al.
patent: 6734082 (2004-05-01), Zheng et al.
Wolf, et al., * Silicon Procesing for the VLSI Era: vol. 1—Process Technology, Lattice Press.
*Title: “Chemical Vapor Deposition of Amorphous and Polycrystalline Films”, pp. 183-185, 191-194.
Kim Dong-chan
Kim Yeong-kwan
Lee Seung-hwan
Park Young-wook
Lee & Morse P.C.
Luu Chuong A.
Samsung Electronics Co,. Ltd.
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