Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-22
2007-05-22
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S903000, C257SE27098, C430S311000
Reexamination Certificate
active
10892588
ABSTRACT:
According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.
REFERENCES:
patent: 6483136 (2002-11-01), Yoshida et al.
patent: 6791200 (2004-09-01), Nii
patent: 10-209298 (1998-08-01), None
patent: 2002-26125 (2002-01-01), None
patent: 1999-0074949 (1999-10-01), None
patent: 2001-0010407 (2001-02-01), None
English language abstract of Korean Publication No. 2001-0010407.
English language abstract of Japanese Publication No. 10-209298.
English language abstract of Korean Publication No. 1999-0074949.
English language abstract of Japanese Publication No. 2002-26125.
Cho Hoo-Sung
Jung Sung-Gon
Kim Gyu-Chul
Lee Si-Hyeung
Park Chang-Min
Marger & Johnson & McCollom, P.C.
Pizarro Marcos D.
Samsung Electronics Co,. Ltd.
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