Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2008-07-23
2009-10-20
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S191000, C257SE21615
Reexamination Certificate
active
07605031
ABSTRACT:
A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from the source region and the gate region abutting the channel region. The channel region includes a channel layer having a second composition of semiconductor material. Additionally, the substrate layer abuts the channel layer and applies a stress to the channel region along a boundary between the substrate layer and the channel layer.
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Baker & Botts L.L.P.
DSM Solutions, Inc.
Ngo Ngan
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