Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-05-30
2006-05-30
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S703000, C257S705000, C257S706000, C257S707000, C257S711000, C257S712000, C257S713000, C257S720000, C257SE23145
Reexamination Certificate
active
07053493
ABSTRACT:
A semiconductor device including a substrate, a semiconductor element mounted on the substrate and a stiffener attached via an adhesive to a surface of the substrate opposite a surface thereof on which the semiconductor element is mounted. The adhesive has a coefficient of thermal expansion smaller than that of the substrate and that of the stiffener, and the modulus of longitudinal elasticity of the adhesive is equal to or larger than 10 GPa. Otherwise, the adhesive has a coefficient of thermal expansion larger than that of the substrate and that of the stiffener, and the modulus of longitudinal elasticity of the adhesive is equal to or smaller than 10 GPa. The height of the stiffener is less than that of the external terminals.
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Fukuzono Kenji
Kanda Takashi
Clark Jasmine
Fujitsu Limited
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