Semiconductor device having source and drain regions different i

Details Semiconductor device having source and drain regions different i Semiconductor device having source and drain regions different i

1998-08-13

2000-02-08

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438529, H01L 21265

Patent

active

06022780&

ABSTRACT:
A side wall spacer and a spacer layer are concurrently formed from an insulating layer in such a manner that the side wall spacer is on one side surface of a gate electrode and the spacer layer covers a drain forming area and the other side surface of the gate electrode, and n-type dopant impurity is ion implanted into the drain forming area and a source forming area, thereby concurrently forming a shallow drain region and a deep source region on both sides of the gate electrode.

REFERENCES:
patent: 5648286 (1997-07-01), Gardner et al.

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