Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-17
2010-11-30
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S624000, C438S625000, C438S626000
Reexamination Certificate
active
07842602
ABSTRACT:
In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.
REFERENCES:
patent: 5036382 (1991-07-01), Yamaha
patent: 5250465 (1993-10-01), Iizuka et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6251775 (2001-06-01), Armbrust et al.
patent: 6307267 (2001-10-01), Wada et al.
patent: 6518184 (2003-02-01), Chambers et al.
patent: 6627554 (2003-09-01), Komada
patent: 6737728 (2004-05-01), Block et al.
patent: 6787480 (2004-09-01), Aoki et al.
patent: 2002/0140101 (2002-10-01), Yang et al.
patent: 2002/0155702 (2002-10-01), Aoki et al.
patent: 2002/0192937 (2002-12-01), Ting et al.
patent: 2003/0057557 (2003-03-01), Matsunaga et al.
patent: 2003/0068582 (2003-04-01), Komada et al.
patent: 2003/0111730 (2003-06-01), Takeda et al.
patent: 2003/0137050 (2003-07-01), Chambers et al.
patent: 2004/0147117 (2004-07-01), Ngo et al.
patent: 2004/0150113 (2004-08-01), Tonegawa
patent: 2004/0266171 (2004-12-01), Aoki et al.
patent: 63-070455 (1988-03-01), None
patent: 03-262125 (1991-11-01), None
patent: 06-177128 (1994-06-01), None
patent: 11-186273 (1999-07-01), None
patent: 11-204523 (1999-07-01), None
patent: 2000-058544 (2000-02-01), None
patent: 2000-150517 (2000-05-01), None
patent: 2000-349085 (2000-12-01), None
patent: 2001-291720 (2001-10-01), None
patent: 2003-347299 (2003-12-01), None
patent: 1998-084723 (1998-01-01), None
patent: 1999-005857 (1999-01-01), None
Ohto Koichi
Takewaki Toshiyuki
Usami Tatsuya
Yamanishi Nobuyuki
Landau Matthew C
Mitchell James M
Renesas Electronics Corporation
Sughrue & Mion, PLLC
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