Semiconductor device having shared bit line structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257SE21658

Reexamination Certificate

active

08035152

ABSTRACT:
A semiconductor device, including a substrate having first and second active regions, the first and second active regions being disposed on opposite sides of an isolation structure, and a bit line electrically coupled to a contact plug that is on the isolation structure between the first active region and the second active region, and electrically coupled to an active bridge pattern directly contacting at least one of the first and second active regions, wherein the contact plug is electrically coupled to the first active region and the second active region, and a bottom surface of the active bridge pattern is below a top surface of the first and second active regions.

REFERENCES:
patent: 6151249 (2000-11-01), Shirota et al.
patent: 2005/0227426 (2005-10-01), Deppe et al.
patent: 2007/0026655 (2007-02-01), Kim et al.
patent: 2007/0290248 (2007-12-01), Weis
patent: 2009/0200533 (2009-08-01), Ufert et al.
patent: 10-2005-0045179 (2005-05-01), None

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