Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-06-22
2011-10-11
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21658
Reexamination Certificate
active
08035152
ABSTRACT:
A semiconductor device, including a substrate having first and second active regions, the first and second active regions being disposed on opposite sides of an isolation structure, and a bit line electrically coupled to a contact plug that is on the isolation structure between the first active region and the second active region, and electrically coupled to an active bridge pattern directly contacting at least one of the first and second active regions, wherein the contact plug is electrically coupled to the first active region and the second active region, and a bottom surface of the active bridge pattern is below a top surface of the first and second active regions.
REFERENCES:
patent: 6151249 (2000-11-01), Shirota et al.
patent: 2005/0227426 (2005-10-01), Deppe et al.
patent: 2007/0026655 (2007-02-01), Kim et al.
patent: 2007/0290248 (2007-12-01), Weis
patent: 2009/0200533 (2009-08-01), Ufert et al.
patent: 10-2005-0045179 (2005-05-01), None
Choe Jeong-dong
Jang Dong-hoon
Kang Hee-soo
Rah Young-seop
Yoon Young-Bae
Budd Paul
Jackson, Jr. Jerome
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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