Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-22
2008-07-22
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S358000, C438S238000, C438S382000
Reexamination Certificate
active
11284237
ABSTRACT:
In a semiconductor device having a resistor and a method of fabricating the same, the device includes a semiconductor substrate having a cell region and a peripheral region. A lower interlayer insulating layer is disposed on the semiconductor substrate. A buffer pad is disposed on the lower interlayer insulating layer in the cell region. A capacitor is provided to have a storage node electrode disposed on the buffer pad, a plate electrode covering the storage node electrode, and a capacitor dielectric is interposed between the storage node electrode and the plate electrode. A lower resistor is disposed on the lower interlayer insulating layer in the peripheral region. An upper resistor is disposed on the lower resistor to expose both ends of the lower resistor. An inter-resistor insulating layer is interposed at least between the lower resistor and the upper resistor. An upper interlayer insulating layer is disposed on the lower interlayer insulating layer to cover the capacitor, the lower resistor, and the upper resistor. A resistor interconnection line is disposed on the upper interlayer insulating layer, to contact a resistor contact plug penetrating the upper interlayer insulating layer and is electrically connected to a first end of the lower resistor and a first end of the upper resistor.
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Mills & Onello LLP
Picardat Kevin M
Samsung Electronics Co,. Ltd.
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