Semiconductor device having resistance based memory array,...

Details Semiconductor device having resistance based memory array,... Semiconductor device having resistance based memory array,...

2011-07-12

2011-07-12

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Particular read circuit

C365S148000, C365S189070, C365S189050

Reexamination Certificate

active

07978539

ABSTRACT:
In one embodiment, the semiconductor device includes a non-volatile memory cell array. Memory cells of the non-volatile memory cell array are resistance based, and each memory cell has a resistance that changes over time after data is written into the memory cell. A write address buffer is configured to store write addresses associated with data being written into the non-volatile memory cell array, and a read unit is configured to perform a read operation to read data from the non-volatile memory cell array. The read unit is configured to control a read current applied to the non-volatile memory cell array during the read operation based on whether a read address matches one of the stored write addresses and at least one indication of settling time of the data being written into the non-volatile memory cell array.

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