Semiconductor device having reduced gate charge and reduced...

Details Semiconductor device having reduced gate charge and reduced... Semiconductor device having reduced gate charge and reduced...

2007-03-13

2007-03-13

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S601000, C438S197000

Reexamination Certificate

active

10741330

ABSTRACT:
In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.

REFERENCES:
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patent: 5741723 (1998-04-01), Litwin
patent: 6613623 (2003-09-01), Tsai et al.
patent: 6707095 (2004-03-01), Chidambarrao et al.
patent: 6894349 (2005-05-01), Beasom
patent: 2004/0084724 (2004-05-01), Kapels et al.
patent: 0119400 (1984-01-01), None

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