Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-08-29
2006-08-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S232000
Reexamination Certificate
active
07098146
ABSTRACT:
A method for fabricating a semiconductor device, including forming a first insulation film, a first semiconductor layer, and a second insulation film in sequence in first to third regions of a semiconductor substrate, removing the first insulation film, the first semiconductor layer, and the second insulation film in the first region and the second insulation film in the third region, selectively forming a second semiconductor layer in the first region of the semiconductor substrate and on the first semiconductor layer in the third region, removing the second insulation film, polishing the second semiconductor layer in the third region using the second insulation film in the second region as a stopper after the second semiconductor layer is formed, and forming semiconductor elements on the first semiconductor layer and the second semiconductor layer after the second insulation film is removed.
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Robert Hannon, et al., “O.25mm Merged Bulk DRAM and SOI Logic Using Patterned SOI”, Symposium on VLSI Technology Digest of Technical Papers, 2000 (2 Pages).
Dinh Thu-Huong
Kabushiki Kaisha Toshiba
Lebentritt Michael
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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