Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C257SE21170, C257SE21280, C257SE21584
Reexamination Certificate
active
07994054
ABSTRACT:
A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.
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Hasunuma Masahiko
Hatano Masaaki
Higashi Kazuyuki
Katata Tomio
Kinoshita Kazuya
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Stark Jarrett J
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