Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-29
2006-08-29
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S230000, C438S231000, C438S232000, C438S756000
Reexamination Certificate
active
07098099
ABSTRACT:
The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). In one embodiment, the method includes growing an oxide layer120from a substrate104, 106over a first dopant region122and a second dopant region128, implanting a first dopant through the oxide layer120, into the substrate104in the first dopant region122, and adjacent a gate structure114, and substantially removing the oxide layer120from the substrate within the second dopant region128. Subsequent to the removal of the oxide layer120in the second dopant region128, a second dopant that is opposite in type to the first dopant is implanted into the substrate106and within the second dopant region128and adjacent a gate structure114.
REFERENCES:
patent: 4757026 (1988-07-01), Woo et al.
patent: 6093594 (2000-07-01), Yeap et al.
patent: 6489207 (2002-12-01), Furukawa et al.
patent: 2002/0046757 (2002-04-01), Inagaki et al.
patent: 2004/0043549 (2004-03-01), Sayama et al.
patent: 2005/0245021 (2005-11-01), Hornung et al.
Chatterjee Amitava
Hornung Brian E.
Riley Deborah J.
Yoon Jong
Brady III W. James
Dang Trung
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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