Semiconductor device having non-uniformly thick gate oxide...

Details Semiconductor device having non-uniformly thick gate oxide... Semiconductor device having non-uniformly thick gate oxide...

2005-11-28

2008-05-27

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C257SE21625

Reexamination Certificate

active

07378322

ABSTRACT:
To improve the refresh characteristics of a semiconductor device, a gate oxide layer comprising a first oxide layer and a second oxide layer are formed on the substrate. A portion of the second oxide layer is isotropically etched using a photoresist layer pattern. A gate is formed by sequentially forming a gate conductive layer and a hard mask layer on the second oxide layer, and sequentially etching the hard mask layer, the gate conductive layer, the second oxide layer and the first oxide layer. Due to isotropic etching of the second oxide layer, the portion of the gate oxide layer corresponding to the center portion of the channel gate is thinner than the other portion of the gate oxide layer correspond to an edge of the channel gate.

REFERENCES:
patent: 5661048 (1997-08-01), Davies et al.
patent: 6743688 (2004-06-01), Gardner et al.

Affiliated with

Also associated with

Rating

Semiconductor device having non-uniformly thick gate oxide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having non-uniformly thick gate oxide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having non-uniformly thick gate oxide... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3982907