Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-02-19
2009-12-29
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S184000, C438S305000, C257S344000, C257SE21437
Reexamination Certificate
active
07638399
ABSTRACT:
A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.
REFERENCES:
patent: 5831306 (1998-11-01), Gardner et al.
patent: 5841168 (1998-11-01), Gardner et al.
patent: 5900666 (1999-05-01), Gardner et al.
patent: 5923982 (1999-07-01), Kadosh et al.
patent: 5973362 (1999-10-01), Park et al.
patent: 6078080 (2000-06-01), Kadosh et al.
patent: 6391725 (2002-05-01), Park et al.
patent: 2-40924 (1990-02-01), None
patent: 3-273646 (1991-12-01), None
patent: 5-3206 (1993-01-01), None
patent: 11-274492 (1999-10-01), None
patent: 2001-237409 (2001-08-01), None
A.Hokanozo, et al Electron Devices Meeting, 2002, IEDM '02, Digest International, pp. 639-642, “14NM Gate Length CMOSFETS Utilizing Low Thermal Budget Process With Poly-SIGe and Ni Salicide”, Dec. 8 and 11, 2002.
Kabushiki Kaisha Toshiba
Nguyen Thinh T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor device having MOSFET with offset-spacer, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having MOSFET with offset-spacer, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having MOSFET with offset-spacer, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4144576