Semiconductor device having MOS transistor and method of manufac

Details Semiconductor device having MOS transistor and method of manufac Semiconductor device having MOS transistor and method of manufac

1996-06-14

1998-03-24

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438219, 438231, 438525, H01L 218238

Patent

active

057312338

ABSTRACT:
An MOS transistor capable of improving hot carrier resistance and a method of manufacturing thereof are provided. In the MOS transistor, nitrogen is introduced in a sidewall oxide film, so that a concentration distribution of nitrogen in a section perpendicular to the main surface of a semiconductor substrate in the sidewall oxide film has a peak at the interface between the semiconductor substrate and the sidewall oxide film. As a result, an interface state at the interface between the sidewall oxide film and the main surface of the semiconductor substrate is suppressed, resulting in decrease of the probability at which hot carriers are trapped in the interface state. Accordingly, the hot carrier resistance is improved.

REFERENCES:
patent: 5223445 (1993-06-01), Fuse
patent: 5250456 (1993-10-01), Bryant
patent: 5369297 (1994-11-01), Kusunoki et al.
patent: 5397720 (1995-03-01), Kwong et al.
patent: 5516707 (1996-05-01), Loh et al.
patent: 5552232 (1996-09-01), Tseng et al.
"A New Drain Engineering Structure-SCD-LDD (Surface Counter Doped LDD) for Improved Hot Carrier Reliability," Jih Wen Chou et al., Jpn. J. Appl. Phys., vol. 32 (1993), pp. L1203-L1205, Part 2, No. 9A, Sep. 1, 1993.
S. Kusonoki, M. Inuishi, T. Yamaguchi, K. Tsukamoto and Y. Alska, Hot-Carrier-Resistant Structure by Re-Oxidized Nitrided Oxide Sidewall For Highly Reliable and High Performance LDD MOSFET's, IEDM Tech. Digest, p. 649, 1991.

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