Semiconductor device having MOS transistor

Details Semiconductor device having MOS transistor Semiconductor device having MOS transistor

1998-02-11

2000-07-04

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, H01L 218238, H01L 21336

Patent

active

060837845

ABSTRACT:
A p type well region, a field insulation film, a gate insulation film, and a gate-use poly-Si layer are formed on the surface of a silicon substrate, after which a laminate of a silicon nitride layer and a resist layer is used as a mask in ion implantation, which forms a low-concentration source region, source contact region, drain region, and drain contact region. Side spacers are formed on both side walls of the gate-use poly-Si layer, after which the laminate of the gate-use poly-Si layer, the side spacers, and the gate insulation film is used along with the field insulation film as a mask to perform ion implantation via the silicon nitride layer, which forms a high-concentration source region and drain region. After a silicide conversion treatment, the unreacted metal is removed, which forms a silicide layer.

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patent: 5930612 (1999-07-01), Ito

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