Semiconductor device having MISFETs

Details Semiconductor device having MISFETs Semiconductor device having MISFETs

2005-05-31

2005-05-31

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S279000, C438S286000, C438S587000

Reexamination Certificate

active

06900086

ABSTRACT:
A first side-wall film is formed on the sides of a gate electrode of a high-voltage transistor, and a second side-wall film is provided on the first side-wall film. The first side-wall film has an etching rate lower that of a pre-metal dielectric, and the second side-wall film has an etching rate substantially equal to that of the of the pre-metal dielectric. The LDD of the high-voltage transistor is provided in that part of the semiconductor substrate which lies right below the first and second side-wall films. The source/drain diffusion layer of the high-voltage transistor is formed in that part of the substrate which is outside the second side-wall film. A first side-wall film having an etching rate lower than that of the pre-metal dielectric and/or a second side-wall film having an etching rate substantially equal to that of the pre-metal dielectric are provided on the sides of the gate electrode of the low voltage transistor. The LDD of the low voltage transistor is provided in that part of the substrate which lies right below the first side-wall film. The drain/source diffusion layer of the low voltage transistor is provided in two continuous parts of the substrate which lie, respectively, right below and outside the second side-wall film.

REFERENCES:
patent: 4642878 (1987-02-01), Maeda
patent: 5696012 (1997-12-01), Son
patent: 5827747 (1998-10-01), Wang et al.
patent: 6018184 (2000-01-01), Becker
patent: 6107642 (2000-08-01), Sundaresan
patent: 6500765 (2002-12-01), Kao et al.

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