Semiconductor device having local interconnection layer and...

Details Semiconductor device having local interconnection layer and... Semiconductor device having local interconnection layer and...

2006-10-17

2006-10-17

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C257SE27112, C257SE23150, C257SE27101, C257S758000, C257S382000, C257S242000, C257S347000, C257S040000, C257S099000, C257S288000, C257S508000, C257S384000, C257S408000

Reexamination Certificate

active

07122850

ABSTRACT:
A semiconductor device having a local interconnection layer and a method for manufacturing the same are provided. A local interconnection layer is formed in an interlayer dielectric (ILD) layer on an isolation layer and a junction layer, for covering a semiconductor substrate, the isolation layer, and a gate pattern. An etch stopper pattern having at least one layer for preventing the etching of the isolation layer is formed under the local interconnection layer. The etch stopper pattern having at least one layer for preventing the etching of the isolation layer can be included when forming the local interconnection layer, thereby preventing leakage current caused by the etching of the isolation layer, improving the electrical characteristics of a semiconductor device, and improving the yield of a process of manufacturing a semiconductor device.

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