Semiconductor device having increased gaps between gates

Details Semiconductor device having increased gaps between gates Semiconductor device having increased gaps between gates

2005-06-28

2005-06-28

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Mosfet type gate sidewall insulating spacer

C438S184000, C438S230000, C438S265000, C438S303000, C438S595000

Reexamination Certificate

active

06911740

ABSTRACT:
According to embodiments of the present invention, methods of manufacturing a semiconductor device, and semiconductor devices manufactured thereby, are provided. A field region is formed that defines active regions in a semiconductor substrate. Spaced apart gates are formed on the active regions in the semiconductor substrate. The gates have sidewalls that extend away from the semiconductor substrate. First spacers are formed on the sidewalls of the gates. Second spacers are formed on the first spacers and opposite to the gates. Ion impurities are implanted into the active regions in the semiconductor substrate, adjacent to the gates, using the first and second spacers as an ion implantation mask. A portion of the second spacers is removed to widen the gaps between the gates. A dielectric layer is formed on the semiconductor substrate in the gaps between the gates.

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