Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-20
2010-06-08
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S763000, C438S786000, C438S791000, C438S792000, C257SE21493
Reexamination Certificate
active
07732324
ABSTRACT:
One aspect of the invention provides a method of forming a semiconductor device (100). One aspect includes forming transistors (120, 125) on a semiconductor substrate (105), forming a first interlevel dielectric layer (165) over the transistors (120, 125), and forming metal interconnects (170, 175) within the first interlevel dielectric layer (165). A carbon-containing gas is used to form a silicon carbon nitride (SiCN) layer (180) over the metal interconnects (170, 175) and the first interlevel dielectric layer (165) within a deposition tool. An adhesion layer (185) is formed on the SiCN layer (180), within the deposition tool, by discontinuing a flow of the carbon-containing gas within the deposition chamber. A second interlevel dielectric layer (190) is formed over the adhesion layer (185).
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Ajmera Sameer K.
Jin Changming
Kim Tae S.
Reddy Anand J.
Ruan Ju-Ai
Brady III Wade J.
Franz Warren L.
Smoot Stephen W
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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