Semiconductor device having IGBT and diode

Details Semiconductor device having IGBT and diode Semiconductor device having IGBT and diode

2011-05-31

2011-05-31

Arora, Ajay K (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S133000, C257S146000, C257SE29027, C438S135000

Reexamination Certificate

active

07952143

ABSTRACT:
A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.

REFERENCES:
patent: 2007/0108468 (2007-05-01), Takahashi
patent: 02-126682 (1990-05-01), None
patent: 2002-368214 (2002-12-01), None
patent: 2005-317751 (2005-11-01), None
patent: 2006-352101 (2006-01-01), None
patent: 2007-012786 (2007-01-01), None
patent: 2007-103770 (2007-04-01), None
patent: 2007-134625 (2007-05-01), None
patent: 2007-214541 (2007-08-01), None
patent: 2008-004866 (2008-01-01), None

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