Semiconductor device having housing with a gelled filler and an

Details Semiconductor device having housing with a gelled filler and an Semiconductor device having housing with a gelled filler and an

1992-01-29

1993-09-07

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

257714, 257790, 257791, 257795, H01L 2342, H01L 2344, H01L 2346, H01L 2944

Patent

active

052432238

ABSTRACT:
A semiconductor device includes a housing, a semiconductor element disposed in a lower section inside the housing, an external lead terminal at least partially disposed within the housing, a gelled filler disposed within the housing, the semiconductor element and at least a portion of the external lead terminal being embedded in the gelled filler, a hardened sealing resin layer disposed over the gelled filler, and at least one internal pressure absorbing chamber having a pocket-type sealed space, the internal pressure absorbing chamber passing through the sealing resin layer and being open at an upper surface side of the gelled filler. The semiconductor device prevents a rise in the internal pressure of the housing in response to thermal expansion of the gelled filler sealed within the housing, and the absorption of external moisture by the gelled filler. When the gelled filler expands according to a heat cycle, its increase in volume is absorbed by the internal pressure absorbing chamber to prevent leakage of the gelled filler and the application of stress to the semiconductor element. The absorption of moisture from the air outside of the semiconductor device by the gelled filler is prevented by defining the internal pressure absorbing chamber as a tightly closed pocket-type space to ensure that the semiconductor device is intrinsically resistant to humidity.

REFERENCES:
European Search Report dated Jun. 4, 1992.
Patent Abstracts of Japan, vol. 10, No. 209, Jul. 22, 1986 (for Japanese Patent No. 61-48947 issued Mar. 10, 1986).

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