Semiconductor device having high-permittivity insulation...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S101000, C257S191000, C257S782000

Reexamination Certificate

active

10477109

ABSTRACT:
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness direction than in an upper portion and in a lower portion.

REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6190779 (2001-02-01), Heimann et al.
patent: 6291867 (2001-09-01), Wallace et al.
patent: 6328816 (2001-12-01), Carlson et al.
patent: 6350684 (2002-02-01), Wang et al.
patent: 6809371 (2004-10-01), Sugiyama
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 6841439 (2005-01-01), Anthony et al.
patent: 2001/0023120 (2001-09-01), Tsunashima et al.
patent: 2002/0175393 (2002-11-01), Baum et al.
patent: 5-275646 (1993-10-01), None
patent: 10-294432 (1998-11-01), None
patent: 11-135774 (1999-05-01), None
patent: 11-186523 (1999-07-01), None
patent: 2000-323591 (2000-11-01), None
patent: 2001-217238 (2001-08-01), None

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