Semiconductor device having high drive current and method of...

Details Semiconductor device having high drive current and method of... Semiconductor device having high drive current and method of...

2007-02-13

2007-02-13

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S069000, C257S204000, C257S206000, C257S350000, C257S351000, C257S357000

Reexamination Certificate

active

10916023

ABSTRACT:
A method comprises forming a first semiconductor device in a substrate, where the first semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a first thickness, and raised source and drain regions disposed on either side of the gate structure. The method further comprises forming a second semiconductor device in the substrate and electrically isolated from the first semiconductor device, where the second semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a second thickness less than the first thickness of the spacer of the first semiconductor device, and recessed source and drain regions disposed on either side of the gate structure.

REFERENCES:
patent: 5021354 (1991-06-01), Pfiester
patent: 5783475 (1998-07-01), Ramaswami
patent: 6165826 (2000-12-01), Chau et al.
patent: 6743684 (2004-06-01), Liu
patent: 2005/0093021 (2005-05-01), Ouyang et al.
Shimizu, A., et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”, IEEE, 2001, 4 pages.

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