Semiconductor device having groove and method of fabricating...

Details Semiconductor device having groove and method of fabricating... Semiconductor device having groove and method of fabricating...

2005-03-22

2005-03-22

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S270000, C438S423000, C438S689000, C438S770000, C438S966000

Reexamination Certificate

active

06869891

ABSTRACT:
A method for forming a plurality of grooves of a semiconductor device having of a plurality of MOS transistors is provided. A plurality of photoresist patterns are formed on a semiconductor substrate. Ions are implanted on a portion of the semiconductor substrate using the plurality of photoresist patterns as a mask. The plurality of photoresist patterns are removed. An oxide layer is formed on the semiconductor substrate having the implanted ions by thermal oxidation. The plurality of grooves are formed on the semiconductor substrate by removing the oxide layer.

REFERENCES:
patent: 5895252 (1999-04-01), Lur et al.
patent: 6136674 (2000-10-01), An et al.
patent: 6224424 (1994-08-01), None

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