Semiconductor device having gate oxide films having different th

Details Semiconductor device having gate oxide films having different th Semiconductor device having gate oxide films having different th

1997-03-25

1999-08-03

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438778, 438787, H01L 21336

Patent

active

059337311

ABSTRACT:
The element separation region has a section on its surface, where the first resist pattern and second resist pattern overlap with each other. The overlapping section is not etched even while removing the dummy oxide films formed in the first and second regions divided by the element separation region. Therefore, a sufficient thickness of the element separation region is kept. Further, by providing the overlapping section, the formation of sources of generating dust, namely, fine recesses and projections on the element separation region, can be prevented if an masking error occurs. Consequently, the step of removing the dust generating sources is not necessary, thereby reducing the number of manufacturing steps.

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