Semiconductor device having field stabilization film and method

Details Semiconductor device having field stabilization film and method Semiconductor device having field stabilization film and method

2005-04-07

2009-12-15

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C257S341000, C257S644000

Reexamination Certificate

active

07632760

ABSTRACT:
In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer.

REFERENCES:
patent: 3343049 (1967-09-01), Barson et al.
patent: 5294824 (1994-03-01), Okada
patent: 5883001 (1999-03-01), Jin et al.
patent: 5953600 (1999-09-01), Gris
patent: 6015457 (2000-01-01), Leung et al.
patent: 6054356 (2000-04-01), Dawson et al.
patent: 6177199 (2001-01-01), Hacker et al.
patent: 6319551 (2001-11-01), Risen et al.
patent: 6642157 (2003-11-01), Shioya et al.
patent: 2006/0237802 (2006-10-01), Chen et al.
Stanley Wolf PhD. et al., “Silicon Processing For the VLSI Era, vol. 1: Process Technology”, 2ndEdition, Lattice Press, Copyright 2000, pp. 785-790.

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