Semiconductor device having elevated gate electrode and elevated

Details Semiconductor device having elevated gate electrode and elevated Semiconductor device having elevated gate electrode and elevated

1998-04-16

2000-08-29

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

061107867

ABSTRACT:
A semiconductor device having an elevated gate electrode and elevated active regions and a process for manufacturing such a device is disclosed. In accordance with one embodiment a semiconductor device is formed by forming a gate insulating layer over a substrate and forming a photoresist block over the gate insulating layer. First portions of the gate insulating layer and first portions of the substrate adjacent the photoresist block are then removed to form a first elevated substrate region under the gate insulating layer and photoresist block. Edge portions of the photoresist block are then removed. Second portions of the gate insulating layer and portions of the first elevated substrate region adjacent the photoresist block are then removed to form second elevated substrate regions adjacent the photoresist block, and a dopant is implanted into the second elevated substrate regions to form source/drain regions, and the photoresist block is used to form a gate electrode. In accordance with another embodiment a semiconductor device is formed substantially as above, but the dopant is implanted at an angle relative to the substrate surface.

REFERENCES:
patent: 5182619 (1993-01-01), Pfiester
patent: 5721443 (1998-02-01), Wu
patent: 5726081 (1998-03-01), Lin et al.
patent: 5824587 (1998-10-01), Krivokapic
patent: 5893741 (1999-04-01), Huang
patent: 5902125 (1999-05-01), Wu
patent: 5949105 (1999-09-01), Moslehi

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