Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-09
2005-08-09
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S509000, C257S510000
Reexamination Certificate
active
06927452
ABSTRACT:
In a semiconductor device having a dual isolation structure, and a method of fabricating the same, an epitaxial layer is formed on the entire surface of the semiconductor device. A device region including the semiconductor device and the epitaxial layer is defined by a device isolation layer. The device isolation layer has a dual structure that includes a diffused isolation layer and a trench isolation layer. The diffused isolation layer is formed in the semiconductor substrate, and surrounds the base and the bottom sidewall of the device region, and the trench isolation layer surrounds the upper sidewall of the device region by vertically penetrating the epitaxial layer. The method of fabricating a semiconductor device is performed by forming a diffused bottom isolation layer at a predetermined region in the semiconductor substrate, and forming a trench exposed at a predetermined region of the semiconductor substrate by patterning the epitaxial layer formed on the entire surface of the semiconductor substrate. A diffused isolation wall is formed to be connected to the diffused bottom isolation layer under the trench. A trench isolation structure is formed to be connected to the diffused isolation wall by filling an insulating layer inside the trench.
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Lee Soo-Cheol
Shin Hwa-Sook
Fourson George
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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