Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-03
2006-10-03
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S231000, C438S286000, C438S301000, C438S305000, C438S453000, C438S586000
Reexamination Certificate
active
07115464
ABSTRACT:
In a method for fabricating a semiconductor device different types of a metal-semiconductor compound are formed on or in at least two different conductive semiconductor regions so that for each semiconductor region the metal-semiconductor compound region may be formed to obtain an optimum overall performance of the semiconductor device. On one of the two semiconductor regions, the metal-semiconductor compound is formed of at least two different metal layers, whereas the metal-semiconductor compound in or on the other semiconductor region is formed from a single metal layer.
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Application Ser. No. 10/260,926, entitled “Semiconductor Device Having Different Metal Silicide Portions and Method for Fabricating the Semiconductor Device,” filed Sep. 30, 2002.
Application Ser. No. 10/282,720, entitled “Method of Forming Different Silicide Portions on Difference Silicon-Containing Regions in a Semiconductor Device,” filed Oct. 29, 2002.
Horstmann Manfred
Stephan Rolf
Wieczorek Karsten
Advanced Micro Devices , Inc.
Pham Long
Rao Shrinivas H.
Williams Morgan & Amerson
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