Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2003-12-30
2008-03-04
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S283000, C438S285000, C438S287000, C257SE21507, C257SE21589
Reexamination Certificate
active
07338867
ABSTRACT:
Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate structures and have heights lower than the heights of the gate structures. Second spacers are disposed on sidewalls of the first spacers and on exposed sidewalls of the first contact pads. Second contact pads are disposed on the first contact pads.
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Korean Office Action, for Korean Application No. 10-2003-0009916.
Choi Si-Young
Jung In-Soo
Kim Chul-Sung
Lee Byeong-Chan
Lee Deok-Hyung
Lindsay, Jr. Walter
Myers Bigel & Sibley & Sajovec
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