Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-01
2009-11-17
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000, C257S331000, C257S332000, C257S333000, C257S334000, C257SE29130, C257SE29134
Reexamination Certificate
active
07619281
ABSTRACT:
A semiconductor device having a buried gate line with a shaped gate trench and a method of fabricating the same are disclosed. The semiconductor device includes a trench isolation layer provided in a semiconductor substrate to define a multi-surfaced active region/channel. A gate line extending to the trench isolation layer fills a portion of the gate trench. The gate trench is formed with a series of depressions to accommodate peaks in the channel. The combination of depressions/peaks operate to increase the effective area of the channel, thereby enabling smaller channel semiconductor devices to be formed without increasing the width thereof.
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Kim Bong-Soo
Lee Kang-Yoon
Seo Hyeoung-Won
Son Young-Woong
Samsung Electronics Co,. Ltd.
Soward Ida M
Volentine & Whitt PLLC
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