Semiconductor device having built-in high frequency bypass capac

Details Semiconductor device having built-in high frequency bypass capac Semiconductor device having built-in high frequency bypass capac

1995-06-02

1997-06-03

Saadat, Mashid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

257691, 257692, 257920, H01L 2352, H01L 2348, H01L 2358

Patent

active

056357672

ABSTRACT:
A high frequency bypass capacitor (36, 36') is built into a thin-film portion (16, 16') of a polymer carrier substrate (15) of a PBGA (10). The carrier substrate (15) has both a stiffener (18) and a thin-film portion (16, 16') which has multiple metal layers (24, 28, 30, 32). The power supply planes (28, 30) of these metal layers are used to form built-in bypass capacitors (36, 36'), wherein the power supply planes are specifically designed to be adjacent and parallel layers. An ultra thin film laminate construction provides thin dielectric films (26) between the metal layers to allow the bypass capacitor to be placed very dose to the attached semiconductor die (12) to further reduce parasitic inductance and resistance between die connections (14) and the bypass capacitor. The built-in feature minimizes inherent parasitic series inductance and resistance, thus enabling the filtering of unwanted low pulse width glitches on a power plane connected to VLSI devices at operating frequencies at or above 100 MHz.

REFERENCES:
patent: 5089878 (1992-02-01), Lee
patent: 5103283 (1992-04-01), Hite
patent: 5134247 (1992-07-01), Wehner et al.
patent: 5239448 (1993-08-01), Perkins et al.
patent: 5281151 (1994-01-01), Arima et al.
Balderes et al., "Glass-Metal Module to Chip Intersection", IBM Technical Disclosure Bulletin vol. 14 No. 11 p. 3224, Apr., 1972
Rucker, et al., "A High Performance SI on SI Multichip Module Technology", 1992 IEEE, 1992 Symposium on VLSI Technology Digest of Technical Papers, pp. 72-73.

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