Semiconductor device having barrier layer between ruthenium...

Details Semiconductor device having barrier layer between ruthenium... Semiconductor device having barrier layer between ruthenium...

2005-05-17

2005-05-17

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S643000, C438S650000

Reexamination Certificate

active

06893915

ABSTRACT:
A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an aluminum alloy layer, a tungsten layer, or a copper layer is formed on the barrier layer. The barrier layer is one of a TiN layer, a TaN layer, a WN layer, and an MoN layer. The TiN layer is one of formed by using an MOCVD process and an ALD process, and the halide-free precursor is a titanium compound selected from the group consisting of pentakis(diethylamino) titanium, tetrakis(diethylamino) titanium, tetrakis(dimethylamino)titanium, and pentakis(dimethylamino)titanium. The TaN layer is formed by using one of an MOCVD process and an ALD process, and the halide-free precursor is a tantalum compound selected from the group consisting of t-butyltrikis(diethylamino)tantalum, pentakis(diethylamino)tantalum, tetrakis(dimethylamino)tantalum, and pentakis(dimethylamino)tantalum.

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Wolf, pp. 121-127, vol. 2, Silicon Process for the VLSI era, 1990, Lattice Press.*
English Abstract.

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