Semiconductor device having an insulation film with reduced...

Details Semiconductor device having an insulation film with reduced... Semiconductor device having an insulation film with reduced...

2005-04-12

2005-04-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S382000, C438S384000, C438S388000, C438S412000, C438S413000, C438S632000

Reexamination Certificate

active

06878594

ABSTRACT:
A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.

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