Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-06
2005-09-06
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C438S199000, C438S220000, C438S231000, C438S302000, C438S305000
Reexamination Certificate
active
06940137
ABSTRACT:
The present invention provides a semiconductor device200having an angled compensation implant, a method of manufacture therefore and a method of manufacturing an integrated circuit including the angled compensation implant. In one embodiment, the method of manufacturing the semiconductor device200includes creating a halo implant240in a substrate210, introducing a compensation implant260in the substrate210at an angle abnormal to the substrate210and forming a source/drain region250above the compensation implant260, the angle reducing a capacitance associated with the halo implant240or the source/drain region250. The method further includes placing a gate structure230over the substrate210.
REFERENCES:
patent: 6232827 (2001-05-01), De et al.
patent: 6563176 (2003-05-01), Gauthier et al.
patent: 6727131 (2004-04-01), Wu et al.
Chen Jihong
Liu Kaiping
Wu Zhiqiang
Brady III Wade James
Gamer Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wojciechowicz Edward
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