Semiconductor device having an active region whose width varies

Details Semiconductor device having an active region whose width varies Semiconductor device having an active region whose width varies

2005-03-29

2005-03-29

Quach, T. N. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S510000

Reexamination Certificate

active

06872994

ABSTRACT:
A semiconductor device of the present invention has an active region whose width varies. Gate electrodes cross over narrowest portions of the active region. Therefore, the device is not prone to producing leakage current even when the line width of the gate electrodes is small.

REFERENCES:
patent: 5777370 (1998-07-01), Omid-Zohoor et al.
patent: 5903030 (1999-05-01), Kim
patent: 6057187 (2000-05-01), Jen et al.
patent: 6656808 (2003-12-01), Kwean
patent: 20040004257 (2004-01-01), Lee et al.

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