Semiconductor device having a trench isolation structure and...

Details Semiconductor device having a trench isolation structure and... Semiconductor device having a trench isolation structure and...

2005-05-31

2005-05-31

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S359000

Reexamination Certificate

active

06900090

ABSTRACT:
A device isolation structure in a semiconductor device and a method for fabricating the same are disclosed. A trench is formed in a semiconductor substrate to confine a plurality of active regions, an insulating material is deposited to fill the trench and the insulating material having a portion extending from the trench to above the semiconductor substrate, and a trench oxidation preventive film is formed on the insulating material. The semiconductor device preferably further includes a gate line extending in one direction on the semiconductor substrate having the trench oxidation-preventive film, and a sidewall spacer formed a sidewall of the gate line, wherein the trench oxidation-preventive film is disposed on the insulating material and disposed under the gate line and the sidewall spacer.

REFERENCES:
patent: 6239476 (2001-05-01), Gardner et al.
patent: 2002/0005560 (2002-01-01), Lee et al.

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