Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-01
2008-01-01
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S022000, C438S049000, C438S136000, C438S137000, C438S138000, C438S146000, C438S290000, C257S134000, C257S646000, C257SE21411
Reexamination Certificate
active
11313341
ABSTRACT:
A semiconductor device including a metal oxide layer, a channel area of the metal oxide layer, a preservation layer formed on the channel area of the metal oxide layer, and at least two channel contacts coupled to the channel area of the metal oxide layer, and a method of forming the same.
REFERENCES:
patent: 6617183 (2003-09-01), Kadota et al.
patent: 2003/0218222 (2003-11-01), Wager et al.
patent: 2006/0244107 (2006-11-01), Sugihara et al.
patent: 1544907 (2005-06-01), None
patent: WO2004114391 (2004-12-01), None
patent: WO2005074038 (2005-08-01), None
Oliver Schmidt, Peter Kiesel, Chris G. Van de Walle, Noble M. Johnson, Jeff Nause and Gottfried H. Döhler, “Evidence for an electrically conducting layer at the native zinc oxide surface,”Jpn. J. Appl. Phys.Part 1, vol. 44, 7271-7274 (2005) (published Oct. 11, 2005).
Oliver Schmidt, Arnd Geis, Peter Kiesel, Chris G. Van de Walle, Noble M. Johnson, Andrey Bakin, Andreas Waag and Gottfried H. Döhler, “Analysis of a Conducting Channel at the Native Zinc Oxide Surface,”Superlattices and Microstructures, 39 (2006) 8-16.
O. Schmidt, P. Kiesel, C.G. Van De Walle, N.M. Johnson, J. Nause, G.H. Doehler; “Effects of an Electrically Conducting Layer at the Zinc Oxide Surface,” Japanese Journal of Applied Physics, vol. 44, No. 10, Oct. 11, 2005 pp. 7271-7274.
Hong David et al., “Passivation of zinc-tin-oxide tin-film transistors,” Journal of Vacuum Science and Technology. B23(6), Microelectronics and nanometer Structures Processing, Measurement and Phenomena, American Institute of Physics, New York, NY, US, Nov./Dec. 2005, pp. 25-27.
Look, D.C., et al., “Effects of surface conduction on Hall-effect measurements in ZnO,” Superlattices and Microstructures, Academic Press, London, GB, vol. 38, No. 4-6, Oct. 2005, pp. 406-412.
Kwon, Y., et al., “Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg) O channel,” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 84, No. 14, Apr. 5, 2004 pp. 2685-2687.
Geis Arnd Willy Walter
Johnson Noble Marshall
Kiesel Peter
Schmidt Oliver
Lebentritt Michael
Lee Kyoung
Marger & Johnson & McCollom, P.C.
Palo Alto Research Center Incorporated
LandOfFree
Semiconductor device having a surface conducting channel and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a surface conducting channel and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a surface conducting channel and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3920333