Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-01
2008-01-01
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S022000, C438S049000, C438S136000, C438S137000, C438S138000, C438S146000, C438S290000, C257S134000, C257S646000, C257SE21411
Reexamination Certificate
active
07314801
ABSTRACT:
A semiconductor device including a metal oxide layer, a channel area of the metal oxide layer, a preservation layer formed on the channel area of the metal oxide layer, and at least two channel contacts coupled to the channel area of the metal oxide layer, and a method of forming the same.
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Geis Arnd Willy Walter
Johnson Noble Marshall
Kiesel Peter
Schmidt Oliver
Lebentritt Michael
Lee Kyoung
Marger & Johnson & McCollom, P.C.
Palo Alto Research Center Incorporated
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